Manufacturer: Infineon Technologies
Win Source Part Number: 1046611-IRF7342D2PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 690pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
P-Channel 55V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO
MOSFET P-CH 55V 3.4A 8SO
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1046611-IRF7342D2PBF | IRF7342D2PBF-ND | IRF7342D2PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7342D2PBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | |
| V(BR)DSS | 55 volts | ||
| PD | 2000 milliwatts |
