Infineon Technologies AG Single FETs, MOSFETs IRF7342D2PBF

Description
P-Channel 55V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO
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Description
P-Channel 55V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IRF7342D2PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7342D2PBF-ND
Single FETs, MOSFETs IRF7342D2PBF-ND
P-Channel 55V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO

P-Channel 55V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7342D2PBF - 1046611-IRF7342D2PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7342D2PBF
1046611-IRF7342D2PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7342D2PBF 1046611-IRF7342D2PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046611-IRF7342D2PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 3.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 690pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 3.4A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046611-IRF7342D2PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 690pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7342D2PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7342D2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7342D2PBF
MOSFET P-CH 55V 3.4A 8SO

MOSFET P-CH 55V 3.4A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF7342D2PBF-ND 1046611-IRF7342D2PBF IRF7342D2PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7342D2PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 55 volts
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