Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7341QTRPBF IRF7341QTRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 093069-IRF7341QTRPBF
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.4W
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 5.1A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 780pF @ 25V
Maximum Rds On at Id,Vgs: 50 mOhm @ 5.1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 1

MOSFET 2N-CH 55V 5.1A 8-SOIC Product overview: IRF7341QTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 5.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 5.1A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7341QTRPBF can be used for catalog matching and distributor lookup.