Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7341QTRPBF IRF7341QTRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 093069-IRF7341QTRPBF Packaging: Cut Reel Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.4W Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 5.1A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Rds On at Id,Vgs: 50 mOhm @ 5.1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 1
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7341QTRPBF - 093069-IRF7341QTRPBF - Win Source Electronics
    Win Source Electronics
  • 55V 5.1A SOIC MOSFET Transistor - 289-IRF7341QTRPBF - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7341QTRPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • FET, MOSFET Arrays - IRF7341QTRPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 093069-IRF7341QTRPBF Packaging: Cut Reel Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.4W Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 5.1A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Rds On at Id,Vgs: 50 mOhm @ 5.1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7341QTRPBF - 093069-IRF7341QTRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7341QTRPBF
093069-IRF7341QTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7341QTRPBF 093069-IRF7341QTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 093069-IRF7341QTRPBF Packaging: Cut Reel Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.4W Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 5.1A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Rds On at Id,Vgs: 50 mOhm @ 5.1A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 1

Manufacturer: Infineon Technologies
Win Source Part Number: 093069-IRF7341QTRPBF
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.4W
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 5.1A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 780pF @ 25V
Maximum Rds On at Id,Vgs: 50 mOhm @ 5.1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 1

Buy Now Datasheet
55V 5.1A SOIC MOSFET Transistor - 289-IRF7341QTRPBF - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
55V 5.1A SOIC MOSFET Transistor
289-IRF7341QTRPBF
55V 5.1A SOIC MOSFET Transistor 289-IRF7341QTRPBF
MOSFET 2N-CH 55V 5.1A 8-SOIC Product overview: IRF7341QTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 5.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 5.1A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7341QTRPBF can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 55V 5.1A 8-SOIC Product overview: IRF7341QTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 5.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 5.1A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7341QTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7341QTRPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7341QTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7341QTRPBF
MOSFET 2N-CH 55V 5.1A 8-SOIC

MOSFET 2N-CH 55V 5.1A 8-SOIC

Supplier's Site
FET, MOSFET Arrays - IRF7341QTRPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7341QTRPBF
FET, MOSFET Arrays IRF7341QTRPBF
MOSFET 2N-CH 55V 5.1A 8-SOIC

MOSFET 2N-CH 55V 5.1A 8-SOIC

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 093069-IRF7341QTRPBF 289-IRF7341QTRPBF IRF7341QTRPBF IRF7341QTRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7341QTRPBF 55V 5.1A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 55 volts 55 volts
PD 2400 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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