Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF734 IRF734

Description
Manufacturer: Infineon Technologies Win Source Part Number: 284284-IRF734 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 4.7A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 740pF @ 25V Maximum Rds On at Id,Vgs: 50 mOhm @ 4.7A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 284284-IRF734 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 4.7A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 740pF @ 25V Maximum Rds On at Id,Vgs: 50 mOhm @ 4.7A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF734 - 284284-IRF734 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF734
284284-IRF734
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF734 284284-IRF734
Manufacturer: Infineon Technologies Win Source Part Number: 284284-IRF734 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 4.7A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 740pF @ 25V Maximum Rds On at Id,Vgs: 50 mOhm @ 4.7A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 284284-IRF734
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 4.7A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 740pF @ 25V
Maximum Rds On at Id,Vgs: 50 mOhm @ 4.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 284284-IRF734
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF734
Polarity N-Channel
V(BR)DSS 55 volts
PD 2000 milliwatts
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