Infineon Technologies AG FET, MOSFET Arrays IRF7338PBF

Mosfet Array N and P-Channel 12V 6.3A, 3A 2W Surface Mount 8-SO

Manufacturer: Infineon Technologies
Win Source Part Number: 127039-IRF7338PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6.3A, 3A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 8.6nC @ 4.5V
Max Input Capacitance: 640pF @ 9V
Maximum Rds On at Id,Vgs: 34 mOhm @ 6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

MOSFET N/P-CH 12V 6.3A/3A 8SO Product overview: IRF7338PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6.3A, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 6.3A, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7338PBF can be used for catalog matching and distributor lookup.