Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7335D1TR IRF7335D1TR

Manufacturer: Infineon Technologies
Win Source Part Number: 205312-IRF7335D1TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 14-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 20nC @ 4.5V
Max Input Capacitance: 1500pF @ 15V
Maximum Rds On at Id,Vgs: 17.5 mOhm @ 10A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 10A 2W Surface Mount 14-SOIC

MOSFET 2N-CH 30V 10A 14SOIC Product overview: IRF7335D1TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7335D1TR can be used for catalog matching and distributor lookup.