Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IRF7326D2PBF

Description
Win Source Part Number: 1065504-IRF7326D2PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: FETKY™ Package: Tube Standard Package: 95 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel FET Feature: Schottky Diode (Isolated) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IRF7306TRPBF; NTMD4184PFR2G; NDS9952A; IRF7205TRPBF; FDS6961AIRF7326D2 PBF; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001559796 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1065504-IRF7326D2PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: FETKY™ Package: Tube Standard Package: 95 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel FET Feature: Schottky Diode (Isolated) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IRF7306TRPBF; NTMD4184PFR2G; NDS9952A; IRF7205TRPBF; FDS6961AIRF7326D2 PBF; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001559796 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065504-IRF7326D2PBF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1065504-IRF7326D2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1065504-IRF7326D2PBF
Win Source Part Number: 1065504-IRF7326D2PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: FETKY™ Package: Tube Standard Package: 95 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel FET Feature: Schottky Diode (Isolated) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IRF7306TRPBF; NTMD4184PFR2G; NDS9952A; IRF7205TRPBF; FDS6961AIRF7326D2 PBF; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001559796 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1065504-IRF7326D2PBF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: FETKY™
Package: Tube
Standard Package: 95
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
FET Feature: Schottky Diode (Isolated)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IRF7306TRPBF; NTMD4184PFR2G; NDS9952A; IRF7205TRPBF; FDS6961AIRF7326D2 PBF;
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001559796
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1065504-IRF7326D2PBF
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity P-Channel
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