Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF IRF7317TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017504-IRF7317TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.6A, 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 900pF @ 15V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF - 017504-IRF7317TRPBF - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - IRF7317TRPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - IRF7317PBFDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - IRF7317PBFTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - IRF7317PBFCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7317TRPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon - 42Y0408 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017504-IRF7317TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.6A, 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 900pF @ 15V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF - 017504-IRF7317TRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF
017504-IRF7317TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF 017504-IRF7317TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017504-IRF7317TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.6A, 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 900pF @ 15V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017504-IRF7317TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.6A, 5.3A
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 900pF @ 15V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - IRF7317TRPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7317TRPBF
FET, MOSFET Arrays IRF7317TRPBF
MOSFET N/P-CH 20V 8-SOIC

MOSFET N/P-CH 20V 8-SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - IRF7317PBFDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7317PBFDKR-ND
FET, MOSFET Arrays IRF7317PBFDKR-ND
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - IRF7317PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7317PBFTR-ND
FET, MOSFET Arrays IRF7317PBFTR-ND
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - IRF7317PBFCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7317PBFCT-ND
FET, MOSFET Arrays IRF7317PBFCT-ND
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7317TRPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7317TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7317TRPBF
MOSFET N/P-CH 20V 6.6A/5.3A 8SO

MOSFET N/P-CH 20V 6.6A/5.3A 8SO

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF7317TRPBF
Triode/MOS Tube/Transistor >> MOSFETs IRF7317TRPBF
20V 29mΩ@6A,4.5V 2W 700mV@250uA 1PCSN-Channel&1PCSP- Channel SO-8 MOSFETs ROHS

20V 29mΩ@6A,4.5V 2W 700mV@250uA 1PCSN-Channel&1PCSP-Channel SO-8 MOSFETs ROHS

Supplier's Site Datasheet
Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon - 42Y0408 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon
42Y0408
Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon 42Y0408
Dual MOSFET, N and P Channel, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV RoHS Compliant: Yes

Dual MOSFET, N and P Channel, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017504-IRF7317TRPBF IRF7317TRPBF IRF7317PBFDKR-ND IRF7317TRPBF IRF7317TRPBF 42Y0408
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon
Polarity P-Channel P-Channel; N and P-Channel N-Channel P-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" SO-8 TO-3
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