Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF IRF7317TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017504-IRF7317TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.6A, 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 900pF @ 15V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF - 017504-IRF7317TRPBF - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - IRF7317TRPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - IRF7317PBFDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - IRF7317PBFTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - IRF7317PBFCT-ND - DigiKey
    DigiKey
  • Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon - 42Y0408 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7317TRPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017504-IRF7317TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.6A, 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 900pF @ 15V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF - 017504-IRF7317TRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF
017504-IRF7317TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF 017504-IRF7317TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017504-IRF7317TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.6A, 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 900pF @ 15V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017504-IRF7317TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.6A, 5.3A
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 900pF @ 15V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - IRF7317TRPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7317TRPBF
FET, MOSFET Arrays IRF7317TRPBF
MOSFET N/P-CH 20V 8-SOIC

MOSFET N/P-CH 20V 8-SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - IRF7317PBFDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7317PBFDKR-ND
FET, MOSFET Arrays IRF7317PBFDKR-ND
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - IRF7317PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7317PBFTR-ND
FET, MOSFET Arrays IRF7317PBFTR-ND
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - IRF7317PBFCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7317PBFCT-ND
FET, MOSFET Arrays IRF7317PBFCT-ND
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon - 42Y0408 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon
42Y0408
Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon 42Y0408
Dual MOSFET, N and P Channel, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV RoHS Compliant: Yes

Dual MOSFET, N and P Channel, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7317TRPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7317TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7317TRPBF
MOSFET N/P-CH 20V 6.6A/5.3A 8SO

MOSFET N/P-CH 20V 6.6A/5.3A 8SO

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF7317TRPBF
Triode/MOS Tube/Transistor >> MOSFETs IRF7317TRPBF
20V 29mΩ@6A,4.5V 2W 700mV@250uA 1PCSN-Channel&1PCSP- Channel SO-8 MOSFETs ROHS

20V 29mΩ@6A,4.5V 2W 700mV@250uA 1PCSN-Channel&1PCSP-Channel SO-8 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017504-IRF7317TRPBF IRF7317TRPBF IRF7317PBFDKR-ND 42Y0408 IRF7317TRPBF IRF7317TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF FET, MOSFET Arrays FET, MOSFET Arrays Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel P-Channel; N and P-Channel P-Channel N-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" TO-3 SO-8
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