MOSFET N/P-CH 20V 6.6A/5.3A 8SO Product overview: IRF7317TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.6A, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.6A, 5.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7317TRPBF can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO
Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Surface Mount 8-SO
MOSFET N/P-CH 20V 8-SOIC
Manufacturer: Infineon Technologies
Win Source Part Number: 017504-IRF7317TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.6A, 5.3A
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 900pF @ 15V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Dual MOSFET, N and P Channel, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV RoHS Compliant: Yes
20V 29mΩ@6A,4.5V 2W 700mV@250uA 1PCSN-Channel&1PCSP-
MOSFET N/P-CH 20V 6.6A/5.3A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-IRF7317TRPBF | IRF7317PBFDKR-ND | IRF7317TRPBF | 017504-IRF7317TRPBF | 42Y0408 | IRF7317TRPBF | IRF7317TRPBF |
| Product Name | 20V 6.6A 5.3A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7317TRPBF | Dual Mosfet, N And P Channel, 6.6 A, 20 V, 0.023 Ohm, 4.5 V, 700 Mv Rohs Compliant Infineon | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | P-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
