Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF IRF7314TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017502-IRF7314TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: IRF7314 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 29nC @ 4.5V Max Input Capacitance: 780pF @ 15V Maximum Rds On at Id,Vgs: 58 mOhm @ 2.9A, 4.5V Alternative Parts (Cross-Reference): Si9933CDY-T1-GE3; Si9933CDY-T1-E3; Si9933BDY-E3; SI9933BDY; Introduction Date: November 18, 1997 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF - 017502-IRF7314TRPBF - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - IRF7314PBFTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - IRF7314PBFCT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - IRF7314TRPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 108080870 - Radwell International
    Radwell International
  • Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon - 42Y0406 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017502-IRF7314TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: IRF7314 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 29nC @ 4.5V Max Input Capacitance: 780pF @ 15V Maximum Rds On at Id,Vgs: 58 mOhm @ 2.9A, 4.5V Alternative Parts (Cross-Reference): Si9933CDY-T1-GE3; Si9933CDY-T1-E3; Si9933BDY-E3; SI9933BDY; Introduction Date: November 18, 1997 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF - 017502-IRF7314TRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF
017502-IRF7314TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF 017502-IRF7314TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017502-IRF7314TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: IRF7314 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 29nC @ 4.5V Max Input Capacitance: 780pF @ 15V Maximum Rds On at Id,Vgs: 58 mOhm @ 2.9A, 4.5V Alternative Parts (Cross-Reference): Si9933CDY-T1-GE3; Si9933CDY-T1-E3; Si9933BDY-E3; SI9933BDY; Introduction Date: November 18, 1997 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017502-IRF7314TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: IRF7314
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.3A
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 29nC @ 4.5V
Max Input Capacitance: 780pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 2.9A, 4.5V
Alternative Parts (Cross-Reference): Si9933CDY-T1-GE3; Si9933CDY-T1-E3; Si9933BDY-E3; SI9933BDY;
Introduction Date: November 18, 1997
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - IRF7314PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7314PBFTR-ND
FET, MOSFET Arrays IRF7314PBFTR-ND
Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surface Mount 8-SO

Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - IRF7314PBFCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7314PBFCT-ND
FET, MOSFET Arrays IRF7314PBFCT-ND
Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surface Mount 8-SO

Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
20V 5.3A MOSFET Transistor
289-IRF7314TRPBF
20V 5.3A MOSFET Transistor 289-IRF7314TRPBF
MOSFET 2P-CH 20V 5.3A 8SO Product overview: IRF7314TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7314TRPBF can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 20V 5.3A 8SO Product overview: IRF7314TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7314TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - IRF7314TRPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7314TRPBF
FET, MOSFET Arrays IRF7314TRPBF
MOSFET 2P-CH 20V 5.3A 8-SOIC

MOSFET 2P-CH 20V 5.3A 8-SOIC

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF7314TRPBF
MOSFET IRF7314TRPBF
MOSFET MOSFT DUAL PCh -20V 5.3A

MOSFET MOSFT DUAL PCh -20V 5.3A

Buy Now Datasheet
Transistor - 108080870 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
108080870
Transistor 108080870
(PRICE/TC) DUAL MOSFET, DUAL P CHANNEL, -5.3 A, -20 V, 0.049 OHM, -4.5 V, -700 MV ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) DUAL MOSFET, DUAL P CHANNEL, -5.3 A, -20 V, 0.049 OHM, -4.5 V, -700 MV ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon - 42Y0406 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon
42Y0406
Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon 42Y0406
Dual MOSFET, Dual P Channel, -5.3 A, -20 V, 0.049 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

Dual MOSFET, Dual P Channel, -5.3 A, -20 V, 0.049 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Radwell International Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017502-IRF7314TRPBF IRF7314PBFTR-ND 289-IRF7314TRPBF IRF7314TRPBF IRF7314TRPBF 108080870 42Y0406
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF FET, MOSFET Arrays 20V 5.3A MOSFET Transistor FET, MOSFET Arrays MOSFET Transistor Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon
Polarity P-Channel P-Channel P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 2000 milliwatts 2 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" Tape & Reel (TR) 8-SOIC (0.154", 3.90mm Width) TO-3
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