Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF IRF7314TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017502-IRF7314TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: IRF7314 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 29nC @ 4.5V Max Input Capacitance: 780pF @ 15V Maximum Rds On at Id,Vgs: 58 mOhm @ 2.9A, 4.5V Alternative Parts (Cross-Reference): Si9933CDY-T1-GE3; Si9933CDY-T1-E3; Si9933BDY-E3; SI9933BDY; Introduction Date: November 18, 1997 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF - 017502-IRF7314TRPBF - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - IRF7314PBFTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - IRF7314PBFCT-ND - DigiKey
    DigiKey
  • Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon - 42Y0406 - Newark, An Avnet Company
    Newark, An Avnet Company
  • FET, MOSFET Arrays - IRF7314TRPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 108080870 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017502-IRF7314TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: IRF7314 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 29nC @ 4.5V Max Input Capacitance: 780pF @ 15V Maximum Rds On at Id,Vgs: 58 mOhm @ 2.9A, 4.5V Alternative Parts (Cross-Reference): Si9933CDY-T1-GE3; Si9933CDY-T1-E3; Si9933BDY-E3; SI9933BDY; Introduction Date: November 18, 1997 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF - 017502-IRF7314TRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF
017502-IRF7314TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF 017502-IRF7314TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017502-IRF7314TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: IRF7314 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.3A Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 29nC @ 4.5V Max Input Capacitance: 780pF @ 15V Maximum Rds On at Id,Vgs: 58 mOhm @ 2.9A, 4.5V Alternative Parts (Cross-Reference): Si9933CDY-T1-GE3; Si9933CDY-T1-E3; Si9933BDY-E3; SI9933BDY; Introduction Date: November 18, 1997 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017502-IRF7314TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: IRF7314
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.3A
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 29nC @ 4.5V
Max Input Capacitance: 780pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 2.9A, 4.5V
Alternative Parts (Cross-Reference): Si9933CDY-T1-GE3; Si9933CDY-T1-E3; Si9933BDY-E3; SI9933BDY;
Introduction Date: November 18, 1997
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
20V 5.3A MOSFET Transistor
289-IRF7314TRPBF
20V 5.3A MOSFET Transistor 289-IRF7314TRPBF
MOSFET 2P-CH 20V 5.3A 8SO Product overview: IRF7314TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7314TRPBF can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 20V 5.3A 8SO Product overview: IRF7314TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7314TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - IRF7314PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7314PBFTR-ND
FET, MOSFET Arrays IRF7314PBFTR-ND
Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surface Mount 8-SO

Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - IRF7314PBFCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7314PBFCT-ND
FET, MOSFET Arrays IRF7314PBFCT-ND
Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surface Mount 8-SO

Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surface Mount 8-SO

Buy Now Datasheet
Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon - 42Y0406 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon
42Y0406
Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon 42Y0406
Dual MOSFET, Dual P Channel, -5.3 A, -20 V, 0.049 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

Dual MOSFET, Dual P Channel, -5.3 A, -20 V, 0.049 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

Supplier's Site
FET, MOSFET Arrays - IRF7314TRPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF7314TRPBF
FET, MOSFET Arrays IRF7314TRPBF
MOSFET 2P-CH 20V 5.3A 8-SOIC

MOSFET 2P-CH 20V 5.3A 8-SOIC

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF7314TRPBF
MOSFET IRF7314TRPBF
MOSFET MOSFT DUAL PCh -20V 5.3A

MOSFET MOSFT DUAL PCh -20V 5.3A

Buy Now Datasheet
Transistor - 108080870 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
108080870
Transistor 108080870
(PRICE/TC) DUAL MOSFET, DUAL P CHANNEL, -5.3 A, -20 V, 0.049 OHM, -4.5 V, -700 MV ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) DUAL MOSFET, DUAL P CHANNEL, -5.3 A, -20 V, 0.049 OHM, -4.5 V, -700 MV ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 017502-IRF7314TRPBF 289-IRF7314TRPBF IRF7314PBFTR-ND 42Y0406 IRF7314TRPBF IRF7314TRPBF 108080870
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7314TRPBF 20V 5.3A MOSFET Transistor FET, MOSFET Arrays Dual Mosfet, Dual P Channel, -5.3 A, -20 V, 0.049 Ohm, -4.5 V, -700 Mv Rohs Compliant Infineon FET, MOSFET Arrays MOSFET Transistor
Polarity P-Channel P-Channel P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 20 volts 20 volts 20 volts
PD 2000 milliwatts 2 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO Tape & Reel (TR) "8-SOIC (0.154"", 3.90mm Width)" TO-3 8-SOIC (0.154", 3.90mm Width)
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