MOSFET 2N-CH 20V 6.6A 8-SOIC
Manufacturer: Infineon Technologies
Win Source Part Number: 017501-IRF7311TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.6A
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 900pF @ 15V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 6.6A 8SO Product overview: IRF7311TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7311TRPBF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 6.6A 2W Surface Mount 8-SO
MOSFET 2N-CH 20V 6.6A 8-SOIC
MOSFET 2N-CH 20V 6.6A 8SO
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF7311TRPBF | 017501-IRF7311TRPBF | 289-IRF7311TRPBF | IRF7311PBFTR-ND | 376-IRF7311TRPBF | IRF7311TRPBF | IRF7311TRPBF |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7311TRPBF | 20V 6.6A MOSFET Transistor | FET, MOSFET Arrays | MOSFET 2N-CH 20V 6.6A 8-SOIC | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 6600 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
