MOSFET 2N-CH 20V 6.6A 8SO Product overview: IRF7311TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7311TR can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 6.6A 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 6.6A 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 1187203-IRF7311TR
Packaging: Tape and Reel
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 6.6A
Rds On (Maximum) at Id, Vgs: 29mOhm at 6A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 700mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 27nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 900pF at 15V
MOSFET 2N-CH 20V 6.6A 8-SOIC
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-IRF7311TR | IRF7311TR | IRF7311TR-ND | 1187203-IRF7311TR | 376-IRF7311TR |
| Product Name | 20V 6.6A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | FETs - Arrays - IRF7311TR | MOSFET 2N-CH 20V 6.6A 8-SOIC |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape and Reel | Tape Reel; Tape & Reel (TR) | ||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
