Infineon Technologies AG FET, MOSFET Arrays IRF7106

Mosfet Array N and P-Channel 20V 3A, 2.5A 2W Surface Mount 8-SO

Manufacturer: Infineon Technologies
Win Source Part Number: 205308-IRF7106
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A, 2.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 300pF @ 15V
Maximum Rds On at Id,Vgs: 125 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

MOSFET N/P-CH 20V 3A/2.5A 8SO Product overview: IRF7106 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3A, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3A, 2.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7106 can be used for catalog matching and distributor lookup.