Infineon Technologies AG Transistor Polarity Infineon IRF7105TRPBF.

Description
Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.083ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes
Description
Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.083ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The IRF7105TRPBF is a complementary N- and P-channel MOSFET in an SO-8 package, designed for surface mount applications. The N-channel device has a drain-source voltage rating of 25 V and a continuous drain current of 3.5 A, with a maximum on-resistance of 0.083 Ω at 10 V gate-source voltage. The P-channel device has a continuous drain current of 2.2 A and a maximum on-resistance of 0.16 Ω at 10 V gate-source voltage. The package conforms to EIA-481 and EIA-541 standards, with dimensions of 12.3 mm × 7.9 mm. Power dissipation is rated at 2 W, and the device is qualified for the consumer market.

Datasheet Summary
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The IRF7105TRPBF is a complementary N- and P-channel MOSFET in an SO-8 package, designed for surface mount applications. The N-channel device has a drain-source voltage rating of 25 V and a continuous drain current of 3.5 A, with a maximum on-resistance of 0.083 Ω at 10 V gate-source voltage. The P-channel device has a continuous drain current of 2.2 A and a maximum on-resistance of 0.16 Ω at 10 V gate-source voltage. The package conforms to EIA-481 and EIA-541 standards, with dimensions of 12.3 mm × 7.9 mm. Power dissipation is rated at 2 W, and the device is qualified for the consumer market.

Suppliers

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Product
Description
Supplier Links
Transistor Polarity Infineon - 26AC0612 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Infineon
26AC0612
Transistor Polarity Infineon 26AC0612
Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.083ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes

Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.083ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 26AC0612
Product Name Transistor Polarity Infineon
Transistor Type Transistor Polarity Infineon
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