MOSFET 2P-CH 20V 2.3A 8SO Product overview: IRF7104TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7104TRPBF can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 2.3A 8-SOIC
Manufacturer: Infineon Technologies
Win Source Part Number: 017484-IRF7104TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: IRF7104
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 290pF @ 15V
Maximum Rds On at Id,Vgs: 250 mOhm @ 1A, 10V
Alternative Parts (Cross-Reference): Si9953DY-E3; Si9953DY; Si9953DY-T1-E3; Si9953DY-T1;
Introduction Date: August 25, 1997
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 2W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 2W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 2W Surface Mount 8-SO
Dual MOSFET, Dual P Channel, -2.3 A, -20 V, 0.19 ohm, -10 V, -3 V RoHS Compliant: Yes
MOSFET MOSFT DUAL PCh -20V 2.3A
MOSFET 2P-CH 20V 2.3A 8SO
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-IRF7104TRPBF | IRF7104TRPBF | 8312869 | 017484-IRF7104TRPBF | IRF7104PBFDKR-ND | 42Y0394 | IRF7104TRPBF | IRF7104TRPBF |
| Product Name | 20V 2.3A MOSFET Transistor | FET, MOSFET Arrays | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7104TRPBF | FET, MOSFET Arrays | Dual Mosfet, Dual P Channel, -2.3 A, -20 V, 0.19 Ohm, -10 V, -3 V Rohs Compliant Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| PD | 2 milliwatts | 2000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
