Manufacturer: Infineon Technologies
Win Source Part Number: 205307-IRF7102
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 6.6nC @ 10V
Max Input Capacitance: 120pF @ 25V
Maximum Rds On at Id,Vgs: 300 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 50V 2A 2W Surface Mount 8-SO
MOSFET 2N-CH 50V 2A 8SO Product overview: IRF7102 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7102 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 50V 2A 8SO
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 205307-IRF7102 | IRF7102-ND | 289-IRF7102 | IRF7102 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7102 | FET, MOSFET Arrays | 50V 2A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |