Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710 IRF710

Description
Manufacturer: Infineon Technologies Win Source Part Number: 284272-IRF710 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 290pF @ 25V Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 284272-IRF710 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 290pF @ 25V Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710 - 284272-IRF710 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710
284272-IRF710
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710 284272-IRF710
Manufacturer: Infineon Technologies Win Source Part Number: 284272-IRF710 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 290pF @ 25V Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 284272-IRF710
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 290pF @ 25V
Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Transistor - 481029 - Radwell International
Willingboro, NJ, United States
Transistor
481029
Transistor 481029
TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 284272-IRF710 481029
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF710 Transistor
Polarity N-Channel
V(BR)DSS 50 volts
PD 2000 milliwatts
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