Manufacturer: Infineon Technologies
Win Source Part Number: 1046571-IRF6798MTR1P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 37A (Ta), 197A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 150μA
Max Gate Charge: 75nC @ 4.5V
Max Input Capacitance: 6560pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.3 mOhm @ 37A, 10V
Alternative Parts (Cross-Reference): IRF6798MTRPBF; IRF6798MPbF; IRF6798MTR1PBF;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFET N-CH 25V 37A DIRECTFET-MX
| Win Source Electronics | Utmel Electronic Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1046571-IRF6798MTR1PBF | 376-IRF6798MTR1PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6798MTR1PBF | MOSFET N-CH 25V 37A DIRECTFET-MX |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 25 volts | 25 volts |
| PD | 2800 to 78000 milliwatts | 78000 milliwatts |
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
