N-Channel 150V 4.9A (Ta), 28A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
N-Channel 150V 4.9A (Ta), 28A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
N-Channel 150V 4.9A (Ta), 28A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
MOSFET N-CH 150V 4.9A DIRECTFET Product overview: IRF6775MTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6775MTRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1046568-IRF6775MTRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MZ
Dimension: DirectFET Isometric MZ
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4.9A (Ta), 28A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1411pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 56 mOhm @ 5.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 150V, 28A, DIRECTFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET 150V 1 x N-CH HEXFET for Digital Audio
MOSFET N-CH 150V 4.9A DIRECTFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF6775MTRPBFTR-ND | 278-IRF6775MTRPBF | 1046568-IRF6775MTRPBF | 2183102 | 13AC9186 | IRF6775MTRPBF | IRF6775MTRPBF |
| Product Name | Single FETs, MOSFETs | 150V 4.9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6775MTRPBF | MOSFETs | Mosfet, N-Ch, 150V, 28A, Directfet Mz; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | DirectFET™ Isometric MZ | Tape & Reel (TR) | SOT3; DIRECTFET MZ | DirectFET | TO-3 | DirectFETTM Isometric MZ | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 150 volts | 150 volts | |||||
| PD | 89 milliwatts | 2800 to 89000 milliwatts |
