Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6723M2DTRPBF IRF6723M2DTRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 205305-IRF6723M2DTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DIRECTFET MA
Maximum Power Dissipation: 2.7W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 15A
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1380pF @ 15V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

MOSFET 2N-CH 30V 15A DIRECTFET Product overview: IRF6723M2DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 15A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF6723M2DTRPBF can be used for catalog matching and distributor lookup.