Infineon Technologies AG FET, MOSFET Arrays IRF6723M2DTR1P

Description
Mosfet Array 2 N-Channel (Dual) 30V 15A 2.7W Surface Mount DIRECTFET™ MA
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 15A 2.7W Surface Mount DIRECTFET™ MA
Request a Quote Datasheet

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FET, MOSFET Arrays - IRF6723M2DTR1PTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF6723M2DTR1PTR-ND
FET, MOSFET Arrays IRF6723M2DTR1PTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 15A 2.7W Surface Mount DIRECTFET™ MA

Mosfet Array 2 N-Channel (Dual) 30V 15A 2.7W Surface Mount DIRECTFET™ MA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6723M2DTR1P - 1046565-IRF6723M2DTR1P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6723M2DTR1P
1046565-IRF6723M2DTR1P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6723M2DTR1P 1046565-IRF6723M2DTR1P
Manufacturer: Infineon Technologies Win Source Part Number: 1046565-IRF6723M2DTR 1P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DIRECTFET MA Maximum Power Dissipation: 2.7W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 15A Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 14nC @ 4.5V Max Input Capacitance: 1380pF @ 15V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 1046565-IRF6723M2DTR1P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DIRECTFET MA
Maximum Power Dissipation: 2.7W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 15A
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1380pF @ 15V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6723M2DTR1P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6723M2DTR1P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6723M2DTR1P
MOSFET 2N-CH 30V 15A DIRECTFETMA

MOSFET 2N-CH 30V 15A DIRECTFETMA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF6723M2DTR1PTR-ND 1046565-IRF6723M2DTR1P IRF6723M2DTR1P
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6723M2DTR1P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type DirectFET™ Isometric MA SOT3; DIRECTFET MA
Polarity N-Channel
V(BR)DSS 30 volts
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