MOSFET N-CH 25V 34A DIRECTFET
Manufacturer: Infineon Technologies
Win Source Part Number: 017479-IRF6715MTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 34A (Ta), 180A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 100μA
Max Gate Charge: 59nC @ 4.5V
Max Input Capacitance: 5340pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 34A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 25V 34A DIRECTFET Product overview: IRF6715MTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6715MTRPBF can be used for catalog matching and distributor lookup.
N-Channel 25V 34A (Ta), 180A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX
MOSFET, N-CH, 25V, 34A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power RoHS Compliant: Yes
MOSFET N-CH 25V 34A DIRECTFET
MOSFET N-CH 25V 34A DIRECTFET
MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF6715MTRPBF | 017479-IRF6715MTRPBF | 278-IRF6715MTRPBF | IRF6715MTRPBFTR-ND | 34AC1775 | 376-IRF6715MTRPBF | IRF6715MTRPBF | IRF6715MTRPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6715MTRPBF | 25V 34A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 25V, 34A, Directfet Mx; Transistor Polarity Infineon | MOSFET N-CH 25V 34A DIRECTFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | 25 volts | ||||
| IDSS | 34000 milliamps | 34000 milliamps | ||||||
| PD | 2800 milliwatts | 2800 to 78000 milliwatts | 2800 milliwatts | 2800 milliwatts |