Infineon Technologies AG Single FETs, MOSFETs IRF6712STR1PBF

N-Channel 25V 17A (Ta), 68A (Tc) 2.2W (Ta), 36W (Tc) Surface Mount DIRECTFET™ SQ

Manufacturer: Infineon Technologies
Win Source Part Number: 122305-IRF6712STR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SQ
Dimension: DirectFET Isometric SQ
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 17A (Ta), 68A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 50μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1570pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.9 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

MOSFET N-CH 25V 17A DIRECTFET Product overview: IRF6712STR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6712STR1PBF can be used for catalog matching and distributor lookup.