Infineon Technologies AG Single FETs, MOSFETs IRF6691TR1

N-Channel 20V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

Manufacturer: Infineon Technologies
Win Source Part Number: 017477-IRF6691TR1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MT
Dimension: DirectFET Isometric MT
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 32A (Ta), 180A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 71nC @ 4.5V
Max Input Capacitance: 6580pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 1.8 mOhm @ 15A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 32A DIRECTFET Product overview: IRF6691TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6691TR1 can be used for catalog matching and distributor lookup.