N-Channel 80V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
N-Channel 80V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
N-Channel 80V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
Manufacturer: Infineon Technologies
Win Source Part Number: 017476-IRF6668TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MZ
Dimension: DirectFET Isometric MZ
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 4.9V @ 100μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1320pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 80V 55A DIRECTFET MZ
MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC
MOSFET, N-CH, 80V, 55A, DIRECTFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
(PRICE/TC) MOSFET, N-CH, 80V, 55A, DIRECTFET MZ; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:55A; DRAIN SOURCE VOLTAGE VDS:80V; ON RESISTANCE RDS(ON):0.012OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER ROHS COMPLIANT: YE. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF6668TRPBFTR-ND | 017476-IRF6668TRPBF | 2152577 | 2152578P | IRF6668TRPBF | IRF6668TRPBF | 91Y4746 | 108077923 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6668TRPBF | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 80V, 55A, Directfet Mz; Transistor Polarity Infineon | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | DirectFET™ Isometric MZ | SOT3; DIRECTFET MZ | Directfet(m) | DirectFET | DirectFETTM Isometric MZ | TO-3 | ||
| V(BR)DSS | 80 volts | |||||||
| PD | 2800 to 89000 milliwatts | |||||||
| TJ | -40 to 150 C (-40 to 302 F) |
