N-Channel 80V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
MOSFET N-CH 80V 55A DIRECTFET MZ Product overview: IRF6668TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6668TR1PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 714548-IRF6668TR1PBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Package: DirectFET Isometric MZ
Power Dissipation (Maximum): 2.8W, 89W
Popularity: Low
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 80V
Id - Continuous Drain Current: 55A
Rds On (Maximum) at Id, Vgs: 15mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.9V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 31nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1320pF at 25V
MOSFET N-CH 80V 55A DIRECTFET MZ
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 12 Milliohms;ID 55A;MZ;PD 89W;VGS +/-20V;-40
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF6668TR1PBFTR-ND | 278-IRF6668TR1PBF | 714548-IRF6668TR1PBF | IRF6668TR1PBF | 70017156 |
| Product Name | Single FETs, MOSFETs | 80V 55A MOSFET Transistor | FETs - Single - IRF6668TR1PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 12 Milliohms;ID 55A;MZ;PD 89W;VGS +/-20V;-40 |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | DirectFET™ Isometric MZ | Tape & Reel (TR) | SOT3 | DirectFETTM Isometric MZ | MZ |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | ||
| PD | 2800 milliwatts | 2800 to 89000 milliwatts | 89000 milliwatts |
