Infineon Technologies AG Newest Parts - IRF6665TR1 IRF6665TR1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 738781-IRF6665TR1 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET SH Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Package: DirectFET Isometric SH Power Dissipation (Maximum): 2.2W, 42W Alternative Parts (Cross-Reference): AON2290; STL3N10F7; IRF6655TR1PBF; IRF6665TR1; Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4.2A, 19A Rds On (Maximum) at Id, Vgs: 62mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 530pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 738781-IRF6665TR1 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET SH Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Package: DirectFET Isometric SH Power Dissipation (Maximum): 2.2W, 42W Alternative Parts (Cross-Reference): AON2290; STL3N10F7; IRF6655TR1PBF; IRF6665TR1; Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4.2A, 19A Rds On (Maximum) at Id, Vgs: 62mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 530pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
Newest Parts - IRF6665TR1 - 738781-IRF6665TR1 - Win Source Electronics
Laguna Hills, CA, United States
Newest Parts - IRF6665TR1
738781-IRF6665TR1
Newest Parts - IRF6665TR1 738781-IRF6665TR1
Manufacturer: Infineon Technologies Win Source Part Number: 738781-IRF6665TR1 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET SH Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Package: DirectFET Isometric SH Power Dissipation (Maximum): 2.2W, 42W Alternative Parts (Cross-Reference): AON2290; STL3N10F7; IRF6655TR1PBF; IRF6665TR1; Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4.2A, 19A Rds On (Maximum) at Id, Vgs: 62mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 530pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 738781-IRF6665TR1
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Package: DirectFET Isometric SH
Power Dissipation (Maximum): 2.2W, 42W
Alternative Parts (Cross-Reference): AON2290; STL3N10F7; IRF6655TR1PBF; IRF6665TR1;
Popularity: Low
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 4.2A, 19A
Rds On (Maximum) at Id, Vgs: 62mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 530pF at 25V

Buy Now
Single FETs, MOSFETs - IRF6665TR1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6665TR1-ND
Single FETs, MOSFETs IRF6665TR1-ND
N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH

N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH

Buy Now Datasheet
Singapore
100V 4.2A MOSFET Transistor
278-IRF6665TR1
100V 4.2A MOSFET Transistor 278-IRF6665TR1
MOSFET N-CH 100V 4.2A DIRECTFET Product overview: IRF6665TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6665TR1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 4.2A DIRECTFET Product overview: IRF6665TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6665TR1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6665TR1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6665TR1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6665TR1
MOSFET N-CH 100V 4.2A DIRECTFET

MOSFET N-CH 100V 4.2A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 738781-IRF6665TR1 IRF6665TR1-ND 278-IRF6665TR1 IRF6665TR1
Product Name Newest Parts - IRF6665TR1 Single FETs, MOSFETs 100V 4.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 2200 to 42000 milliwatts 2200 milliwatts
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