N-Channel MOSFET, 100V, 8.3A, 31mΩ, Surface Mount Product overview: IRF6662TRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 100V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6662TRPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
N-Channel 100V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
Manufacturer: Infineon Technologies
Win Source Part Number: 069325-IRF6662TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MZ
Dimension: DirectFET Isometric MZ
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.3A (Ta), 47A (Tc)
Gate-Source Threshold Voltage: 4.9V @ 100μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 8.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 8.3A DIRECTFET
MOSFET N-CH 100V 8.3A DIRECTFET
MOSFET, N-CH, 100V, 47A, DIRECTFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 8.3A DIRECTFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF6662TRPBF | IRF6662TRPBFTR-ND | 069325-IRF6662TRPBF | IRF6662TRPBF | IRF6662TRPBF | 34AC1774 | 376-IRF6662TRPBF |
| Product Name | N-Channel SMD 100V 8.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6662TRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 47A, Directfet Mz; Transistor Polarity Infineon | MOSFET N-CH 100V 8.3A DIRECTFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| PD | 89000 milliwatts | 2800 to 89000 milliwatts | 2800 milliwatts | 89000 milliwatts | |||
| TJ | -40 C (-40 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||
| Package Type | DirectFET™ Isometric MZ | SOT3; DIRECTFET MZ | DirectFETTM Isometric MZ | DirectFET™ Isometric MZ | TO-3 | ||
| V(BR)DSS | 100 volts | 100 volts | 100 volts |
