N CHANNEL MOSFET, 80V, 12A DIRECTFET MN, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:80V; On Resistance Rds(on):7.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V;RoHS Compliant: Yes Product overview: IRF6646TRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 12A, 68A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 12A, 68A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6646TRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 12A DIRECTFET
IRF6646 - 12V-300V N-CHANNEL POW
Manufacturer: Infineon Technologies
Win Source Part Number: 017474-IRF6646TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MN
Dimension: DirectFET Isometric MN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 12A (Ta), 68A (Tc)
Gate-Source Threshold Voltage: 4.9V @ 150μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 2060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
MOSFET N-CH 80V 12A DIRECTFET
MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF6646TRPBF | 2583963P | IRF6646TRPBF | 017474-IRF6646TRPBF | IRF6646TRPBFDKR-ND | IRF6646TRPBF | IRF6646TRPBF |
| Product Name | N-Channel 80V 12A 68A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6646TRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 2800 milliwatts | 2800 milliwatts | 2800 to 89000 milliwatts | ||||
| TJ | -40 C (-40 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||||
| Package Type | WDSON | DirectFET™ Isometric MN | SOT3; DIRECTFET MN | DirectFET™ Isometric MN | 2060 pF @ 25 V | ||
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel |
