N-Channel 100V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
MOSFET N-CH 100V 10.3A DIRECTFET Product overview: IRF6644TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 10.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 10.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6644TR1PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 128538-IRF6644TR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MN
Dimension: DirectFET Isometric MN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10.3A (Ta), 60A (Tc)
Gate-Source Threshold Voltage: 4.8V @ 150μA
Max Gate Charge: 47nC @ 10V
Max Input Capacitance: 2210pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 10.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 10.3A DIRECTFET
MOSFET N-CH 100V 10.3A DIRECTFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF6644TR1PBFTR-ND | 278-IRF6644TR1PBF | 128538-IRF6644TR1PBF | IRF6644TR1PBF | IRF6644TR1PBF |
| Product Name | Single FETs, MOSFETs | 100V 10.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6644TR1PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | DirectFET™ Isometric MN | Tape & Reel (TR) | SOT3; DIRECTFET MN | DirectFETTM Isometric MN | DirectFET™ Isometric MN |
| PD | 2800 milliwatts | 2800 to 89000 milliwatts | 2800 milliwatts | ||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |