Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6641TRPBF IRF6641TRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 116065-IRF6641TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MZ
Dimension: DirectFET Isometric MZ
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.6A (Ta), 26A (Tc)
Gate-Source Threshold Voltage: 4.9V @ 150μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 2290pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 59.9 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Trans MOSFET N-CH 200V 4.6A 7-Pin Direct-FET MZ T/R Product overview: IRF6641TRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6641TRPBF can be used for catalog matching and distributor lookup.

N-Channel 200V 4.6A (Ta), 26A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ