Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6636TRPBF IRF6636TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017471-IRF6636TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Family Name: IRF6636 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET ST Dimension: DirectFET Isometric ST Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 18A (Ta), 81A (Tc) Gate-Source Threshold Voltage: 2.45V @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 2420pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): 2SK3397; 2SK3397(TE24L,Q); 2SK3397(T4LMBSH,Q); 2SK3397(TE24L); Introduction Date: May 29, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017471-IRF6636TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Family Name: IRF6636 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET ST Dimension: DirectFET Isometric ST Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 18A (Ta), 81A (Tc) Gate-Source Threshold Voltage: 2.45V @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 2420pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): 2SK3397; 2SK3397(TE24L,Q); 2SK3397(T4LMBSH,Q); 2SK3397(TE24L); Introduction Date: May 29, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6636TRPBF - 017471-IRF6636TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6636TRPBF
017471-IRF6636TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6636TRPBF 017471-IRF6636TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017471-IRF6636TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Family Name: IRF6636 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET ST Dimension: DirectFET Isometric ST Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 18A (Ta), 81A (Tc) Gate-Source Threshold Voltage: 2.45V @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 2420pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): 2SK3397; 2SK3397(TE24L,Q); 2SK3397(T4LMBSH,Q); 2SK3397(TE24L); Introduction Date: May 29, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017471-IRF6636TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Family Name: IRF6636
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET ST
Dimension: DirectFET Isometric ST
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 18A (Ta), 81A (Tc)
Gate-Source Threshold Voltage: 2.45V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 2420pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): 2SK3397; 2SK3397(TE24L,Q); 2SK3397(T4LMBSH,Q); 2SK3397(TE24L);
Introduction Date: May 29, 2006
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
20V 18A MOSFET Transistor
278-IRF6636TRPBF
20V 18A MOSFET Transistor 278-IRF6636TRPBF
MOSFET N-CH 20V 18A DIRECTFET Product overview: IRF6636TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6636TRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 18A DIRECTFET Product overview: IRF6636TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6636TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6636TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6636TRPBFTR-ND
Single FETs, MOSFETs IRF6636TRPBFTR-ND
N-Channel 20V 18A (Ta), 81A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

N-Channel 20V 18A (Ta), 81A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

Buy Now Datasheet
Single FETs, MOSFETs - IRF6636TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6636TRPBF
Single FETs, MOSFETs IRF6636TRPBF
IRF6636 - 12V-300V N-CHANNEL POW

IRF6636 - 12V-300V N-CHANNEL POW

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6636TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6636TRPBF
Single FETs, MOSFETs IRF6636TRPBF
IRF6636 - 12V-300V N-CHANNEL POW

IRF6636 - 12V-300V N-CHANNEL POW

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6636TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6636TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6636TRPBF
MOSFET N-CH 20V 18A DIRECTFET

MOSFET N-CH 20V 18A DIRECTFET

Supplier's Site
MOSFET N-CH 20V 18A DIRECTFET - 376-IRF6636TRPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 20V 18A DIRECTFET
376-IRF6636TRPBF
MOSFET N-CH 20V 18A DIRECTFET 376-IRF6636TRPBF
MOSFET N-CH 20V 18A DIRECTFET

MOSFET N-CH 20V 18A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017471-IRF6636TRPBF 278-IRF6636TRPBF IRF6636TRPBFTR-ND IRF6636TRPBF IRF6636TRPBF 376-IRF6636TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6636TRPBF 20V 18A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 20V 18A DIRECTFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 2200 to 42000 milliwatts 42 milliwatts 2200 milliwatts 42000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3; DIRECTFET ST Tape & Reel (TR) DirectFET™ Isometric ST DirectFET™ Isometric ST DirectFETTM Isometric ST
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