MOSFET N-CH 20V 18A DIRECTFET Product overview: IRF6636 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6636 can be used for catalog matching and distributor lookup.
N-Channel 20V 18A (Ta), 81A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
Manufacturer: Infineon Technologies
Win Source Part Number: 1187149-IRF6636
Packaging: Cut Tape (CT)
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IRF6636
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: DirectFET Isometric ST
Power Dissipation (Maximum): 2.2W, 42W
Alternative Parts (Cross-Reference): 2SK3397; 2SK3397(TE24L,Q); 2SK3397(T4LMBSH,Q); 2SK3397(TE24L);
Introduction Date: February 11, 2005
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 18A, 81A
Rds On (Maximum) at Id, Vgs: 4.5mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.45V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 27nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2420pF at 10V
MOSFET N-CH 20V 18A DIRECTFET
MOSFET N-CH 20V 18A DIRECTFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF6636 | IRF6636TR-ND | 1187149-IRF6636 | IRF6636 | IRF6636 |
| Product Name | 20V 18A MOSFET Transistor | Single FETs, MOSFETs | Electronic Surplus - IRF6636 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 2200 milliwatts | 2200 to 42000 milliwatts | 2200 milliwatts | ||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||
| Package Type | Tape & Reel (TR) | DirectFET™ Isometric ST | SOT3 | DirectFET™ Isometric ST | DirectFETTM Isometric ST |
| Packing Method | Tape & Reel (TR) | Tape Reel; Cut Tape (CT) | Tape Reel; Tape & Reel (TR) |