Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6635TR1PBF IRF6635TR1PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 119384-IRF6635TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Family Name: IRF6635 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 32A (Ta), 180A (Tc) Gate-Source Threshold Voltage: 2.35V @ 250μA Max Gate Charge: 71nC @ 4.5V Max Input Capacitance: 5970pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 32A, 10V Alternative Parts (Cross-Reference): IRF6635PbF; IRF6635TRPbF; IRF6635; IRF6727MTRPbF; Introduction Date: May 03, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 119384-IRF6635TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Family Name: IRF6635 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 32A (Ta), 180A (Tc) Gate-Source Threshold Voltage: 2.35V @ 250μA Max Gate Charge: 71nC @ 4.5V Max Input Capacitance: 5970pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 32A, 10V Alternative Parts (Cross-Reference): IRF6635PbF; IRF6635TRPbF; IRF6635; IRF6727MTRPbF; Introduction Date: May 03, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6635TR1PBF - 119384-IRF6635TR1PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6635TR1PBF
119384-IRF6635TR1PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6635TR1PBF 119384-IRF6635TR1PBF
Manufacturer: Infineon Technologies Win Source Part Number: 119384-IRF6635TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Family Name: IRF6635 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 32A (Ta), 180A (Tc) Gate-Source Threshold Voltage: 2.35V @ 250μA Max Gate Charge: 71nC @ 4.5V Max Input Capacitance: 5970pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 32A, 10V Alternative Parts (Cross-Reference): IRF6635PbF; IRF6635TRPbF; IRF6635; IRF6727MTRPbF; Introduction Date: May 03, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 119384-IRF6635TR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Family Name: IRF6635
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 32A (Ta), 180A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 250μA
Max Gate Charge: 71nC @ 4.5V
Max Input Capacitance: 5970pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 mOhm @ 32A, 10V
Alternative Parts (Cross-Reference): IRF6635PbF; IRF6635TRPbF; IRF6635; IRF6727MTRPbF;
Introduction Date: May 03, 2006
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF6635TR1PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6635TR1PBF
Single FETs, MOSFETs IRF6635TR1PBF
MOSFET N-CH 30V 32A DIRECTFET

MOSFET N-CH 30V 32A DIRECTFET

Supplier's Site
Single FETs, MOSFETs - IRF6635TR1PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6635TR1PBFTR-ND
Single FETs, MOSFETs IRF6635TR1PBFTR-ND
N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Buy Now Datasheet
Singapore
30V 32A MOSFET Transistor
278-IRF6635TR1PBF
30V 32A MOSFET Transistor 278-IRF6635TR1PBF
MOSFET N-CH 30V 32A DIRECTFET Product overview: IRF6635TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6635TR1PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 32A DIRECTFET Product overview: IRF6635TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6635TR1PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6635TR1PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6635TR1PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6635TR1PBF
MOSFET N-CH 30V 32A DIRECTFET

MOSFET N-CH 30V 32A DIRECTFET

Supplier's Site
MOSFET N-CH 30V 32A DIRECTFET - 376-IRF6635TR1PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 32A DIRECTFET
376-IRF6635TR1PBF
MOSFET N-CH 30V 32A DIRECTFET 376-IRF6635TR1PBF
MOSFET N-CH 30V 32A DIRECTFET

MOSFET N-CH 30V 32A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 119384-IRF6635TR1PBF IRF6635TR1PBF IRF6635TR1PBFTR-ND 278-IRF6635TR1PBF IRF6635TR1PBF 376-IRF6635TR1PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6635TR1PBF Single FETs, MOSFETs Single FETs, MOSFETs 30V 32A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 30V 32A DIRECTFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 2800 to 89000 milliwatts 2800 milliwatts 2800 milliwatts 89000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3; DIRECTFET MX DirectFET™ Isometric MX DirectFET™ Isometric MX Tape & Reel (TR) DirectFETTM Isometric MX
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