Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6631TR1PBF IRF6631TR1PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 124517-IRF6631TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta), 57A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1450pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.8 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 124517-IRF6631TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta), 57A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1450pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.8 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6631TR1PBF - 124517-IRF6631TR1PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6631TR1PBF
124517-IRF6631TR1PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6631TR1PBF 124517-IRF6631TR1PBF
Manufacturer: Infineon Technologies Win Source Part Number: 124517-IRF6631TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta), 57A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1450pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.8 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 124517-IRF6631TR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SQ
Dimension: DirectFET Isometric SQ
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta), 57A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1450pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.8 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 124517-IRF6631TR1PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6631TR1PBF
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 2200 to 42000 milliwatts
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