Infineon Technologies AG FETs - Single - IRF6629TR1PBF IRF6629TR1PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 813486-IRF6629TR1PBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25V
Part Status: Obsolete (End Of Life)
Supplier Device Package: DIRECTFET MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Package: DirectFET Isometric MX
Power Dissipation (Maximum): 2.8W , 100W (Tc)
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.1mOhm at 29A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 51nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 4260pF at 13V
Current - Continuous Drain (Id) at 25°C: 29A , 180A (Tc)
Vgs(th) (Maximum) at Id: 2.35V at 100μA
Maximum Vgs: ±20V

MOSFET N-CH 25V 29A DIRECTFET Product overview: IRF6629TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6629TR1PBF can be used for catalog matching and distributor lookup.

N-Channel 25V 29A (Ta), 180A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX