Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6623TR1PBF IRF6623TR1PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 131196-IRF6623TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET ST Dimension: DirectFET Isometric ST Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1360pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 131196-IRF6623TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET ST Dimension: DirectFET Isometric ST Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1360pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6623TR1PBF - 131196-IRF6623TR1PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6623TR1PBF
131196-IRF6623TR1PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6623TR1PBF 131196-IRF6623TR1PBF
Manufacturer: Infineon Technologies Win Source Part Number: 131196-IRF6623TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET ST Dimension: DirectFET Isometric ST Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1360pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 131196-IRF6623TR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET ST
Dimension: DirectFET Isometric ST
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 16A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1360pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
20V 16A MOSFET Transistor
278-IRF6623TR1PBF
20V 16A MOSFET Transistor 278-IRF6623TR1PBF
MOSFET N-CH 20V 16A DIRECTFET Product overview: IRF6623TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6623TR1PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 16A DIRECTFET Product overview: IRF6623TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6623TR1PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6623TR1PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6623TR1PBFTR-ND
Single FETs, MOSFETs IRF6623TR1PBFTR-ND
N-Channel 20V 16A (Ta), 55A (Tc) 1.4W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

N-Channel 20V 16A (Ta), 55A (Tc) 1.4W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6623TR1PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6623TR1PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6623TR1PBF
MOSFET N-CH 20V 16A DIRECTFET

MOSFET N-CH 20V 16A DIRECTFET

Supplier's Site
MOSFET N-CH 20V 16A DIRECTFET - 376-IRF6623TR1PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 20V 16A DIRECTFET
376-IRF6623TR1PBF
MOSFET N-CH 20V 16A DIRECTFET 376-IRF6623TR1PBF
MOSFET N-CH 20V 16A DIRECTFET

MOSFET N-CH 20V 16A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 131196-IRF6623TR1PBF 278-IRF6623TR1PBF IRF6623TR1PBFTR-ND IRF6623TR1PBF 376-IRF6623TR1PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6623TR1PBF 20V 16A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 20V 16A DIRECTFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 1400 to 42000 milliwatts 1400 milliwatts 42000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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