Manufacturer: Infineon Technologies
Win Source Part Number: 131891-IRF6622TR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SQ
Dimension: DirectFET Isometric SQ
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 15A (Ta), 59A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1450pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.3 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): IRF6622TRPBF; IRF6622PbF; IRF6622TR1PBF; IRF6811STR1PBF;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
N-Channel 25V 15A (Ta), 59A (Tc) 2.2W (Ta), 34W (Tc) Surface Mount DIRECTFET™ SQ
MOSFET N-CH 25V 15A DIRECTFET
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 131891-IRF6622TR1PBF | IRF6622TR1PBFTR-ND | IRF6622TR1PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6622TR1PBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 25 volts | ||
| PD | 2200 to 34000 milliwatts |
