Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6622TR1PBF IRF6622TR1PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 131891-IRF6622TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 15A (Ta), 59A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1450pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.3 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): IRF6622TRPBF; IRF6622PbF; IRF6622TR1PBF; IRF6811STR1PBF; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6622TR1PBF - 131891-IRF6622TR1PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF6622TR1PBFTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6622TR1PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 131891-IRF6622TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 15A (Ta), 59A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1450pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.3 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): IRF6622TRPBF; IRF6622PbF; IRF6622TR1PBF; IRF6811STR1PBF; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6622TR1PBF - 131891-IRF6622TR1PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6622TR1PBF
131891-IRF6622TR1PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6622TR1PBF 131891-IRF6622TR1PBF
Manufacturer: Infineon Technologies Win Source Part Number: 131891-IRF6622TR1PBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 15A (Ta), 59A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1450pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.3 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): IRF6622TRPBF; IRF6622PbF; IRF6622TR1PBF; IRF6811STR1PBF; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 131891-IRF6622TR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SQ
Dimension: DirectFET Isometric SQ
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 15A (Ta), 59A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1450pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.3 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): IRF6622TRPBF; IRF6622PbF; IRF6622TR1PBF; IRF6811STR1PBF;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF6622TR1PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6622TR1PBFTR-ND
Single FETs, MOSFETs IRF6622TR1PBFTR-ND
N-Channel 25V 15A (Ta), 59A (Tc) 2.2W (Ta), 34W (Tc) Surface Mount DIRECTFET™ SQ

N-Channel 25V 15A (Ta), 59A (Tc) 2.2W (Ta), 34W (Tc) Surface Mount DIRECTFET™ SQ

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6622TR1PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6622TR1PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6622TR1PBF
MOSFET N-CH 25V 15A DIRECTFET

MOSFET N-CH 25V 15A DIRECTFET

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 131891-IRF6622TR1PBF IRF6622TR1PBFTR-ND IRF6622TR1PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6622TR1PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts
PD 2200 to 34000 milliwatts
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