Infineon Technologies AG Single FETs, MOSFETs IRF6621TR1PBF

N-Channel 30V 12A (Ta), 55A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ

MOSFET N-CH 30V 12A DIRECTFET Product overview: IRF6621TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6621TR1PBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 102576-IRF6621TR1PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Family Name: IRF6621
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SQ
Dimension: DirectFET Isometric SQ
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 17.5nC @ 4.5V
Max Input Capacitance: 1460pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.1 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): STK800; IRF6621; IRF6621TR1; IRF6621PbF;
Introduction Date: May 24, 2006
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance