Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6621TR1 IRF6621TR1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 125955-IRF6621TR1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Family Name: IRF6621 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 17.5nC @ 4.5V Max Input Capacitance: 1460pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.1 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): STK800; IRF6621PbF; IRF6621TR1PBF; IRF6621TRPbF; Introduction Date: October 28, 2005 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 125955-IRF6621TR1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Family Name: IRF6621 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 17.5nC @ 4.5V Max Input Capacitance: 1460pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.1 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): STK800; IRF6621PbF; IRF6621TR1PBF; IRF6621TRPbF; Introduction Date: October 28, 2005 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6621TR1
125955-IRF6621TR1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6621TR1 125955-IRF6621TR1
Manufacturer: Infineon Technologies Win Source Part Number: 125955-IRF6621TR1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Family Name: IRF6621 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET SQ Dimension: DirectFET Isometric SQ Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 17.5nC @ 4.5V Max Input Capacitance: 1460pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.1 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): STK800; IRF6621PbF; IRF6621TR1PBF; IRF6621TRPbF; Introduction Date: October 28, 2005 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 125955-IRF6621TR1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Family Name: IRF6621
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SQ
Dimension: DirectFET Isometric SQ
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 17.5nC @ 4.5V
Max Input Capacitance: 1460pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.1 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): STK800; IRF6621PbF; IRF6621TR1PBF; IRF6621TRPbF;
Introduction Date: October 28, 2005
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore, Singapore
30V 12A MOSFET Transistor
278-IRF6621TR1
30V 12A MOSFET Transistor 278-IRF6621TR1
MOSFET N-CH 30V 12A DIRECTFET Product overview: IRF6621TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6621TR1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 12A DIRECTFET Product overview: IRF6621TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6621TR1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6621TR1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6621TR1TR-ND
Single FETs, MOSFETs IRF6621TR1TR-ND
N-Channel 30V 12A (Ta), 55A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ

N-Channel 30V 12A (Ta), 55A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6621TR1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6621TR1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6621TR1
MOSFET N-CH 30V 12A DIRECTFET

MOSFET N-CH 30V 12A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 125955-IRF6621TR1 278-IRF6621TR1 IRF6621TR1TR-ND IRF6621TR1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6621TR1 30V 12A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2200 to 42000 milliwatts 2200 milliwatts
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