Manufacturer: Infineon Technologies
Win Source Part Number: 017467-IRF6620TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 27A (Ta), 150A (Tc)
Gate-Source Threshold Voltage: 2.45V @ 250μA
Max Gate Charge: 42nC @ 4.5V
Max Input Capacitance: 4130pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.7 mOhm @ 27A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
N-Channel 20V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
N-Channel 20V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
MOSFET N-CH 20V 27A DIRECTFET Product overview: IRF6620TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 27A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 27A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6620TRPBF can be used for catalog matching and distributor lookup.
IRF6620 - 12V-300V N-CHANNEL POW
MOSFET N-CH 20V 27A DIRECTFET
MOSFET N-CH 20V 27A DIRECTFET
MOSFET, N-CH, 20V, 150A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.45V; Power RoHS Compliant: Yes
MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC
MOSFET N-CH 20V 27A DIRECTFET
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 017467-IRF6620TRPBF | IRF6620TRPBFTR-ND | 278-IRF6620TRPBF | IRF6620TRPBF | 376-IRF6620TRPBF | 13AC9182 | IRF6620TRPBF | IRF6620TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6620TRPBF | Single FETs, MOSFETs | 20V 27A MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 20V 27A DIRECTFET | Mosfet, N-Ch, 20V, 150A, Directfet Mx; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| PD | 2800 to 89000 milliwatts | 2800 milliwatts | 2800 milliwatts | 89000 milliwatts | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||||
| Package Type | SOT3; DIRECTFET MX | DirectFET™ Isometric MX | Tape & Reel (TR) | DirectFET™ Isometric MX | TO-3 | DirectFETTM Isometric MX |
