N-Channel 30V 30A (Ta), 170A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
N-Channel 30V 30A (Ta), 170A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
MOSFET N-CH 30V 30A DIRECTFET Product overview: IRF6618TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6618TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 069314-IRF6618TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Family Name: IRF6618
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MT
Dimension: DirectFET Isometric MT
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Ta), 170A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 250μA
Max Gate Charge: 65nC @ 4.5V
Max Input Capacitance: 5640pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): IRF6618PBF; IRF6618TR1PBF;
Introduction Date: July 13, 2006
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
MOSFET, N-CH, 30V, 170A, DIRECTFET MT-7; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.64V; PowerRoHS Compliant: Yes
MOSFET N-CH 30V 30A DIRECTFET
MOSFET N-CH 30V 30A DIRECTFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF6618TRPBFCT-ND | 278-IRF6618TRPBF | 069314-IRF6618TRPBF | IRF6618TRPBF | 91Y4737 | IRF6618TRPBF | 376-IRF6618TRPBF |
| Product Name | Single FETs, MOSFETs | 30V 30A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6618TRPBF | MOSFET | Mosfet, N-Ch, 30V, 170A, Directfet Mt-7; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 30A DIRECTFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | DirectFET™ Isometric MT | Tape & Reel (TR) | SOT3; DIRECTFET MT | TO-3 | DirectFETTM Isometric MT | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 89 milliwatts | 2800 to 89000 milliwatts | 89000 milliwatts |
