Infineon Technologies AG Single FETs, MOSFETs IRF6617TRPBF

Description
N-Channel 30V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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Description
N-Channel 30V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF6617TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6617TRPBFTR-ND
Single FETs, MOSFETs IRF6617TRPBFTR-ND
N-Channel 30V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

N-Channel 30V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6617TRPBF - 017465-IRF6617TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6617TRPBF
017465-IRF6617TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6617TRPBF 017465-IRF6617TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017465-IRF6617TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET ST Dimension: DirectFET Isometric ST Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.35V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.1 mOhm @ 15A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017465-IRF6617TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET ST
Dimension: DirectFET Isometric ST
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.1 mOhm @ 15A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF6617TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6617TRPBF
Single FETs, MOSFETs IRF6617TRPBF
MOSFET N-CH 30V 14A DIRECTFET

MOSFET N-CH 30V 14A DIRECTFET

Supplier's Site Datasheet
Singapore
30V 14A MOSFET Transistor
278-IRF6617TRPBF
30V 14A MOSFET Transistor 278-IRF6617TRPBF
MOSFET N-CH 30V 14A DIRECTFET Product overview: IRF6617TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6617TRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 14A DIRECTFET Product overview: IRF6617TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6617TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6617TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6617TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6617TRPBF
MOSFET N-CH 30V 14A DIRECTFET

MOSFET N-CH 30V 14A DIRECTFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC

MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC

Buy Now Datasheet
MOSFET N-CH 30V 14A DIRECTFET - 376-IRF6617TRPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 14A DIRECTFET
376-IRF6617TRPBF
MOSFET N-CH 30V 14A DIRECTFET 376-IRF6617TRPBF
MOSFET N-CH 30V 14A DIRECTFET

MOSFET N-CH 30V 14A DIRECTFET

Supplier's Site
Mosfet, N-Ch, 30V, 55A, Directfet St-7; Transistor Polarity Infineon - 91Y4736 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 55A, Directfet St-7; Transistor Polarity Infineon
91Y4736
Mosfet, N-Ch, 30V, 55A, Directfet St-7; Transistor Polarity Infineon 91Y4736
MOSFET, N-CH, 30V, 55A, DIRECTFET ST-7; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 55A, DIRECTFET ST-7; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF6617TRPBFTR-ND 017465-IRF6617TRPBF IRF6617TRPBF 278-IRF6617TRPBF IRF6617TRPBF IRF6617TRPBF 376-IRF6617TRPBF 91Y4736
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6617TRPBF Single FETs, MOSFETs 30V 14A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 30V 14A DIRECTFET Mosfet, N-Ch, 30V, 55A, Directfet St-7; Transistor Polarity Infineon
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type DirectFET™ Isometric ST SOT3; DIRECTFET ST DirectFET™ Isometric ST Tape & Reel (TR) DirectFETTM Isometric ST TO-3
V(BR)DSS 30 volts 30 volts 30 volts 30 volts
PD 2100 to 42000 milliwatts 2100 milliwatts 42 milliwatts 42000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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