Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF IRF6616TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046554-IRF6616TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Family Name: IRF6616 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 19A (Ta), 106A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 3765pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 19A, 10V Alternative Parts (Cross-Reference): IRF6616PBF; IRF6616TR1PBF; Introduction Date: May 23, 2007 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046554-IRF6616TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Family Name: IRF6616 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 19A (Ta), 106A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 3765pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 19A, 10V Alternative Parts (Cross-Reference): IRF6616PBF; IRF6616TR1PBF; Introduction Date: May 23, 2007 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF - 1046554-IRF6616TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF
1046554-IRF6616TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF 1046554-IRF6616TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046554-IRF6616TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Family Name: IRF6616 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 19A (Ta), 106A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 3765pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 19A, 10V Alternative Parts (Cross-Reference): IRF6616PBF; IRF6616TR1PBF; Introduction Date: May 23, 2007 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046554-IRF6616TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Family Name: IRF6616
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 19A (Ta), 106A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 44nC @ 4.5V
Max Input Capacitance: 3765pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 19A, 10V
Alternative Parts (Cross-Reference): IRF6616PBF; IRF6616TR1PBF;
Introduction Date: May 23, 2007
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF6616TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6616TRPBFTR-ND
Single FETs, MOSFETs IRF6616TRPBFTR-ND
N-Channel 40V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

N-Channel 40V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Buy Now Datasheet
Single FETs, MOSFETs - IRF6616TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6616TRPBF
Single FETs, MOSFETs IRF6616TRPBF
IRF6616 - MOSFET, 40V, 106A, 5.0

IRF6616 - MOSFET, 40V, 106A, 5.0

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6616TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6616TRPBF
Single FETs, MOSFETs IRF6616TRPBF
MOSFET N-CH 40V 19A DIRECTFET

MOSFET N-CH 40V 19A DIRECTFET

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs

MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs

Buy Now Datasheet
Mosfet, N-Ch, 40V, 106A, 150Deg C, 89W; Channel Type Infineon - 91Y4735 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 106A, 150Deg C, 89W; Channel Type Infineon
91Y4735
Mosfet, N-Ch, 40V, 106A, 150Deg C, 89W; Channel Type Infineon 91Y4735
MOSFET, N-CH, 40V, 106A, 150DEG C, 89W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:106A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

MOSFET, N-CH, 40V, 106A, 150DEG C, 89W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:106A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6616TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6616TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6616TRPBF
MOSFET N-CH 40V 19A DIRECTFET

MOSFET N-CH 40V 19A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046554-IRF6616TRPBF IRF6616TRPBFTR-ND IRF6616TRPBF IRF6616TRPBF 91Y4735 IRF6616TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 40V, 106A, 150Deg C, 89W; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 2800 to 89000 milliwatts 2800 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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