Infineon Technologies AG Single FETs, MOSFETs IRF6616TRPBF

Description
IRF6616 - MOSFET, 40V, 106A, 5.0
Request a Quote Datasheet
Description
IRF6616 - MOSFET, 40V, 106A, 5.0
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF6616TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6616TRPBF
Single FETs, MOSFETs IRF6616TRPBF
IRF6616 - MOSFET, 40V, 106A, 5.0

IRF6616 - MOSFET, 40V, 106A, 5.0

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6616TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6616TRPBF
Single FETs, MOSFETs IRF6616TRPBF
MOSFET N-CH 40V 19A DIRECTFET

MOSFET N-CH 40V 19A DIRECTFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF - 1046554-IRF6616TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF
1046554-IRF6616TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF 1046554-IRF6616TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046554-IRF6616TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Family Name: IRF6616 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 19A (Ta), 106A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 3765pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 19A, 10V Alternative Parts (Cross-Reference): IRF6616PBF; IRF6616TR1PBF; Introduction Date: May 23, 2007 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046554-IRF6616TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Family Name: IRF6616
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 19A (Ta), 106A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 44nC @ 4.5V
Max Input Capacitance: 3765pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 19A, 10V
Alternative Parts (Cross-Reference): IRF6616PBF; IRF6616TR1PBF;
Introduction Date: May 23, 2007
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF6616TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6616TRPBFTR-ND
Single FETs, MOSFETs IRF6616TRPBFTR-ND
N-Channel 40V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

N-Channel 40V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs

MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6616TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6616TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6616TRPBF
MOSFET N-CH 40V 19A DIRECTFET

MOSFET N-CH 40V 19A DIRECTFET

Supplier's Site
Mosfet, N-Ch, 40V, 106A, 150Deg C, 89W; Channel Type Infineon - 91Y4735 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 106A, 150Deg C, 89W; Channel Type Infineon
91Y4735
Mosfet, N-Ch, 40V, 106A, 150Deg C, 89W; Channel Type Infineon 91Y4735
MOSFET, N-CH, 40V, 106A, 150DEG C, 89W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:106A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

MOSFET, N-CH, 40V, 106A, 150DEG C, 89W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:106A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF6616TRPBF 1046554-IRF6616TRPBF IRF6616TRPBFTR-ND IRF6616TRPBF IRF6616TRPBF 91Y4735
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6616TRPBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 40V, 106A, 150Deg C, 89W; Channel Type Infineon
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 19000 milliamps 106000 milliamps
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