Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6614TR1PBF IRF6614TR1PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 777018-IRF6614TR1PBF Series: HEXFET Packaging: Reel package Operating Temperature Range: -40°C ~ 150°C (TJ) Package: DirectFET Isometric ST Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc) Part Status: Obsolete(EOL) Family Name: IRF6614 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: DIRECTFET ST Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 2.25V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 2560pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.1W (Ta), 42W (Tc) Rds On (Maximum) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V Alternative Parts (Cross-Reference): IRF6614TR1; IRF6614; IRF6614PBF; IRF6614TRPbF; Introduction Date: May 05, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 777018-IRF6614TR1PBF Series: HEXFET Packaging: Reel package Operating Temperature Range: -40°C ~ 150°C (TJ) Package: DirectFET Isometric ST Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc) Part Status: Obsolete(EOL) Family Name: IRF6614 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: DIRECTFET ST Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 2.25V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 2560pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.1W (Ta), 42W (Tc) Rds On (Maximum) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V Alternative Parts (Cross-Reference): IRF6614TR1; IRF6614; IRF6614PBF; IRF6614TRPbF; Introduction Date: May 05, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6614TR1PBF - 777018-IRF6614TR1PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6614TR1PBF
777018-IRF6614TR1PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6614TR1PBF 777018-IRF6614TR1PBF
Manufacturer: Infineon Technologies Win Source Part Number: 777018-IRF6614TR1PBF Series: HEXFET Packaging: Reel package Operating Temperature Range: -40°C ~ 150°C (TJ) Package: DirectFET Isometric ST Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc) Part Status: Obsolete(EOL) Family Name: IRF6614 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: DIRECTFET ST Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 2.25V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 2560pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.1W (Ta), 42W (Tc) Rds On (Maximum) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V Alternative Parts (Cross-Reference): IRF6614TR1; IRF6614; IRF6614PBF; IRF6614TRPbF; Introduction Date: May 05, 2006 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 777018-IRF6614TR1PBF
Series: HEXFET
Packaging: Reel package
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: DirectFET Isometric ST
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
Part Status: Obsolete(EOL)
Family Name: IRF6614
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: DIRECTFET ST
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.25V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 2560pF @ 20V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.1W (Ta), 42W (Tc)
Rds On (Maximum) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
Alternative Parts (Cross-Reference): IRF6614TR1; IRF6614; IRF6614PBF; IRF6614TRPbF;
Introduction Date: May 05, 2006
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
40V 12.7A MOSFET Transistor
278-IRF6614TR1PBF
40V 12.7A MOSFET Transistor 278-IRF6614TR1PBF
MOSFET N-CH 40V 12.7A DIRECTFET Product overview: IRF6614TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 12.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6614TR1PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 12.7A DIRECTFET Product overview: IRF6614TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 12.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6614TR1PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6614TR1PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6614TR1PBFTR-ND
Single FETs, MOSFETs IRF6614TR1PBFTR-ND
N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST

Buy Now Datasheet
MOSFET N-CH 40V 12.7A DIRECTFET - 376-IRF6614TR1PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 40V 12.7A DIRECTFET
376-IRF6614TR1PBF
MOSFET N-CH 40V 12.7A DIRECTFET 376-IRF6614TR1PBF
MOSFET N-CH 40V 12.7A DIRECTFET

MOSFET N-CH 40V 12.7A DIRECTFET

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6614TR1PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6614TR1PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6614TR1PBF
MOSFET N-CH 40V 12.7A DIRECTFET

MOSFET N-CH 40V 12.7A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 777018-IRF6614TR1PBF 278-IRF6614TR1PBF IRF6614TR1PBFTR-ND 376-IRF6614TR1PBF IRF6614TR1PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6614TR1PBF 40V 12.7A MOSFET Transistor Single FETs, MOSFETs MOSFET N-CH 40V 12.7A DIRECTFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 2100 to 42000 milliwatts 2100 milliwatts 2100 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3 Tape & Reel (TR) DirectFET™ Isometric ST DirectFETTM Isometric ST
Packing Method Tape Reel; Reel package Tape & Reel (TR) Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
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