Manufacturer: Infineon Technologies
Win Source Part Number: 777018-IRF6614TR1PBF
Series: HEXFET
Packaging: Reel package
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: DirectFET Isometric ST
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
Part Status: Obsolete(EOL)
Family Name: IRF6614
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: DIRECTFET ST
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.25V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 2560pF @ 20V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.1W (Ta), 42W (Tc)
Rds On (Maximum) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
Alternative Parts (Cross-Reference): IRF6614TR1; IRF6614; IRF6614PBF; IRF6614TRPbF;
Introduction Date: May 05, 2006
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
MOSFET N-CH 40V 12.7A DIRECTFET Product overview: IRF6614TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 12.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6614TR1PBF can be used for catalog matching and distributor lookup.
N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
MOSFET N-CH 40V 12.7A DIRECTFET
MOSFET N-CH 40V 12.7A DIRECTFET
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 777018-IRF6614TR1PBF | 278-IRF6614TR1PBF | IRF6614TR1PBFTR-ND | 376-IRF6614TR1PBF | IRF6614TR1PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6614TR1PBF | 40V 12.7A MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 40V 12.7A DIRECTFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 2100 to 42000 milliwatts | 2100 milliwatts | 2100 milliwatts | ||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||
| Package Type | SOT3 | Tape & Reel (TR) | DirectFET™ Isometric ST | DirectFETTM Isometric ST | |
| Packing Method | Tape Reel; Reel package | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) |