Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6610TR1PBF IRF6610TR1PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 777017-IRF6610TR1PBF Series: HEXFET Packaging: Reel package Operating Temperature Range: -40°C ~ 150°C (TJ) Package: DirectFET Isometric SQ Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc) Part Status: Obsolete(EOL) Family Name: IRF6610 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: DIRECTFET SQ Channel Type Type: N Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 2.55V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 1520pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.2W (Ta), 42W (Tc) Rds On (Maximum) @ Id, Vgs: 6.8 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): IRF6610TRPbF; IRF6610PbF; Introduction Date: May 31, 2006 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 777017-IRF6610TR1PBF Series: HEXFET Packaging: Reel package Operating Temperature Range: -40°C ~ 150°C (TJ) Package: DirectFET Isometric SQ Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc) Part Status: Obsolete(EOL) Family Name: IRF6610 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: DIRECTFET SQ Channel Type Type: N Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 2.55V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 1520pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.2W (Ta), 42W (Tc) Rds On (Maximum) @ Id, Vgs: 6.8 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): IRF6610TRPbF; IRF6610PbF; Introduction Date: May 31, 2006 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6610TR1PBF - 777017-IRF6610TR1PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6610TR1PBF
777017-IRF6610TR1PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6610TR1PBF 777017-IRF6610TR1PBF
Manufacturer: Infineon Technologies Win Source Part Number: 777017-IRF6610TR1PBF Series: HEXFET Packaging: Reel package Operating Temperature Range: -40°C ~ 150°C (TJ) Package: DirectFET Isometric SQ Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc) Part Status: Obsolete(EOL) Family Name: IRF6610 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: DIRECTFET SQ Channel Type Type: N Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 2.55V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 1520pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.2W (Ta), 42W (Tc) Rds On (Maximum) @ Id, Vgs: 6.8 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): IRF6610TRPbF; IRF6610PbF; Introduction Date: May 31, 2006 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 777017-IRF6610TR1PBF
Series: HEXFET
Packaging: Reel package
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: DirectFET Isometric SQ
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc)
Part Status: Obsolete(EOL)
Family Name: IRF6610
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: DIRECTFET SQ
Channel Type Type: N
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 2.55V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 1520pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.2W (Ta), 42W (Tc)
Rds On (Maximum) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): IRF6610TRPbF; IRF6610PbF;
Introduction Date: May 31, 2006
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

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Single FETs, MOSFETs - IRF6610TR1PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6610TR1PBFTR-ND
Single FETs, MOSFETs IRF6610TR1PBFTR-ND
N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ

N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6610TR1PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6610TR1PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6610TR1PBF
MOSFET N-CH 20V 15A DIRECTFET

MOSFET N-CH 20V 15A DIRECTFET

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 777017-IRF6610TR1PBF IRF6610TR1PBFTR-ND IRF6610TR1PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6610TR1PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 2200 to 42000 milliwatts
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