N-Channel 30V 27A (Ta), 94A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT
MOSFET N-CH 30V 27A DIRECTFET Product overview: IRF6607 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 27A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 27A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6607 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 27A DIRECTFET
Manufacturer: Infineon Technologies
Win Source Part Number: 108157-IRF6607
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MT
Dimension: DirectFET Isometric MT
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A (Ta), 94A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 75nC @ 4.5V
Max Input Capacitance: 6930pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 4,800
MOSFET N-CH 30V 27A DIRECTFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF6607TR-ND | 278-IRF6607 | IRF6607 | 108157-IRF6607 | IRF6607 |
| Product Name | Single FETs, MOSFETs | 30V 27A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6607 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | DirectFET™ Isometric MT | Tape & Reel (TR) | DirectFET™ Isometric MT | SOT3; DIRECTFET MT | 75 nC @ 4.5 V |
| PD | 3600 milliwatts | 3600 milliwatts | 3600 to 42000 milliwatts | ||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
