Infineon Technologies AG Single FETs, MOSFETs IRF6604TR1

Description
N-Channel 30V 12A (Ta), 49A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ
Request a Quote Datasheet
Description
N-Channel 30V 12A (Ta), 49A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF6604TR1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6604TR1-ND
Single FETs, MOSFETs IRF6604TR1-ND
N-Channel 30V 12A (Ta), 49A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ

N-Channel 30V 12A (Ta), 49A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ

Buy Now Datasheet
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6604TR1
069310-IRF6604TR1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6604TR1 069310-IRF6604TR1
Manufacturer: Infineon Technologies Win Source Part Number: 069310-IRF6604TR1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Family Name: IRF6604 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MQ Dimension: DirectFET Isometric MQ Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 26nC @ 4.5V Max Input Capacitance: 2270pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 12A, 7V Alternative Parts (Cross-Reference): NTLMS4502NR2G; NTLMS4502NR2; IRF6604; IRF6604TRPBF; Introduction Date: October 29, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 069310-IRF6604TR1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Family Name: IRF6604
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MQ
Dimension: DirectFET Isometric MQ
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 49A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 26nC @ 4.5V
Max Input Capacitance: 2270pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 11.5 mOhm @ 12A, 7V
Alternative Parts (Cross-Reference): NTLMS4502NR2G; NTLMS4502NR2; IRF6604; IRF6604TRPBF;
Introduction Date: October 29, 2002
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore
30V 12A MOSFET Transistor
278-IRF6604TR1
30V 12A MOSFET Transistor 278-IRF6604TR1
MOSFET N-CH 30V 12A DIRECTFET Product overview: IRF6604TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6604TR1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 12A DIRECTFET Product overview: IRF6604TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6604TR1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6604TR1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6604TR1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6604TR1
MOSFET N-CH 30V 12A DIRECTFET

MOSFET N-CH 30V 12A DIRECTFET

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF6604TR1-ND 069310-IRF6604TR1 278-IRF6604TR1 IRF6604TR1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6604TR1 30V 12A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type DirectFET™ Isometric MQ SOT3; DIRECTFET MQ Tape & Reel (TR) DirectFETTM Isometric MQ
V(BR)DSS 30 volts
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