Infineon Technologies AG Single FETs, MOSFETs IRF6603TR1

Description
N-Channel 30V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT
Request a Quote Datasheet
Description
N-Channel 30V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF6603TR1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6603TR1-ND
Single FETs, MOSFETs IRF6603TR1-ND
N-Channel 30V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT

N-Channel 30V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT

Buy Now Datasheet
Singapore
30V 27A MOSFET Transistor
278-IRF6603TR1
30V 27A MOSFET Transistor 278-IRF6603TR1
MOSFET N-CH 30V 27A DIRECTFET Product overview: IRF6603TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 27A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 27A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6603TR1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 27A DIRECTFET Product overview: IRF6603TR1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 27A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 27A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6603TR1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6603TR1 - 069309-IRF6603TR1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6603TR1
069309-IRF6603TR1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6603TR1 069309-IRF6603TR1
Manufacturer: Infineon Technologies Win Source Part Number: 069309-IRF6603TR1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MT Dimension: DirectFET Isometric MT Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 27A (Ta), 92A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 72nC @ 4.5V Max Input Capacitance: 6590pF @ 15V Maximum Gate-Source Voltage: +20V, -12V Maximum Rds On at Id,Vgs: 3.4 mOhm @ 25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 069309-IRF6603TR1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MT
Dimension: DirectFET Isometric MT
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A (Ta), 92A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 72nC @ 4.5V
Max Input Capacitance: 6590pF @ 15V
Maximum Gate-Source Voltage: +20V, -12V
Maximum Rds On at Id,Vgs: 3.4 mOhm @ 25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6603TR1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6603TR1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6603TR1
MOSFET N-CH 30V 27A DIRECTFET

MOSFET N-CH 30V 27A DIRECTFET

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF6603TR1-ND 278-IRF6603TR1 069309-IRF6603TR1 IRF6603TR1
Product Name Single FETs, MOSFETs 30V 27A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6603TR1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type DirectFET™ Isometric MT Tape & Reel (TR) SOT3; DIRECTFET MT DirectFETTM Isometric MT
PD 3600 milliwatts 3600 to 42000 milliwatts
Unlock Full Specs
to access all available technical data