Manufacturer: Infineon Technologies
Win Source Part Number: 114791-IRF6602
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Case / Package: DIRECTFET MQ
Dimension: DirectFET Isometric MQ
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 11A (Ta), 48A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1420pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
N-Channel 20V 11A (Ta), 48A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ
MOSFET N-CH 20V 11A DIRECTFET
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 114791-IRF6602 | IRF6602TR-ND | IRF6602 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6602 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel |
