Infineon Technologies AG Single FETs, MOSFETs IRF6602

N-Channel 20V 11A (Ta), 48A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ

Manufacturer: Infineon Technologies
Win Source Part Number: 114791-IRF6602
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Case / Package: DIRECTFET MQ
Dimension: DirectFET Isometric MQ
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 11A (Ta), 48A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1420pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 11A DIRECTFET Product overview: IRF6602 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6602 can be used for catalog matching and distributor lookup.