The IRF640NSTRLPBF is a fifth-generation HEXFET¬Æ power MOSFET designed for high-efficiency applications. It features a maximum drain-source breakdown voltage of 200V and a continuous drain current rating of 18A at a case temperature of 25¬8C. The device has a low on-resistance of 0.15,Ѷ at a gate-source voltage of 10V and a current of 11A, making it suitable for applications requiring efficient power management. This MOSFET operates over a wide temperature range from -55¬8C to +175¬8C and is fully avalanche rated, providing reliability in demanding environments. The IRF640NSTRLPBF is packaged in a D2PAK format, which is advantageous for surface mount applications due to its low thermal resistance and ability to handle high power levels. It also has simple drive requirements, facilitating ease of integration into various circuit designs. Engineers may find this component particularly useful in commercial and industrial applications where power dissipation levels approach 50 watts. The device is lead-free and compliant with environmental standards, making it a suitable choice for modern electronic designs.
HEXFET POWER MOSFET
MOSFET N-CH 200V 18A D2PAK
HEXFET N-Ch MOSFET 18A 200V D2PAK
N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 017456-IRF640NSTRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: IRF640
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 1160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IRF640NS-NL; IRF640ST4; IRF640S; SiHF640STR;
Introduction Date: December 21, 2001
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
(PRICE/TC) MOSFET TRANSISTOR, N CHANNEL, 18 A, 200 V, 0.15 OHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
INFINEON Semiconductors IRF640NSTRLPBF
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
MOSFET N-CH 200V 18A D2PAK
200V 18A 150W 150mΩ@10V,11A 4V@250uA N Channel D2PAK MOSFETs ROHS
MOSFET Transistor, N Channel, 18 A, 200 V, 0.15 ohm, 10 V, 4 V RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF640NSTRLPBF | 8312853P | 8312853 | IRF640NSTRLPBFCT-ND | 017456-IRF640NSTRLPBF | 66777034 | IRF640NSTRLPBF | IRF640NSTRLPBF | IRF640NSTRLPBF | 42Y0392 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NSTRLPBF | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet Transistor, N Channel, 18 A, 200 V, 0.15 Ohm, 10 V, 4 V Rohs Compliant Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||||
| IDSS | 18000 milliamps | |||||||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts |
