MOSFET N-CH 200V 18A D2PAK Product overview: IRF640NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640NSPBF can be used for catalog matching and distributor lookup.
N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 069305-IRF640NSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 1160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 11A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 18A D2PAK
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
MOSFET N-CH 200V 18A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF640NSPBF | IRF640NSPBF-ND | 069305-IRF640NSPBF | IRF640NSPBF | 70016973 | IRF640NSPBF |
| Product Name | 200V 18A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NSPBF | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | Tube | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2Pak | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | |||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel |
