Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NSPBF IRF640NSPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069305-IRF640NSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 1160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 11A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NSPBF - 069305-IRF640NSPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF640NSPBF-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IRF640NSPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF640NSPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55 - 70016973 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 069305-IRF640NSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 1160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 11A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NSPBF - 069305-IRF640NSPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NSPBF
069305-IRF640NSPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NSPBF 069305-IRF640NSPBF
Manufacturer: Infineon Technologies Win Source Part Number: 069305-IRF640NSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 1160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 11A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 069305-IRF640NSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 1160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 11A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF640NSPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF640NSPBF-ND
Single FETs, MOSFETs IRF640NSPBF-ND
N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - IRF640NSPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF640NSPBF
Single FETs, MOSFETs IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK

MOSFET N-CH 200V 18A D2PAK

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
200V 18A MOSFET Transistor
278-IRF640NSPBF
200V 18A MOSFET Transistor 278-IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK Product overview: IRF640NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640NSPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 18A D2PAK Product overview: IRF640NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640NSPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF640NSPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF640NSPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK

MOSFET N-CH 200V 18A D2PAK

Supplier's Site
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55 - 70016973 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
70016973
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55 70016973
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069305-IRF640NSPBF IRF640NSPBF-ND IRF640NSPBF 278-IRF640NSPBF IRF640NSPBF 70016973
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF640NSPBF Single FETs, MOSFETs Single FETs, MOSFETs 200V 18A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts 200 volts 200 volts
PD 150000 milliwatts 150000 milliwatts 150000 milliwatts 150000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tube TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2Pak
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